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PostPosted: Sun 15:53, 28 Nov 2010    Post subject: mbt fora shoes To SiCl4-H2 gas source at low tempe

Low-temperature gas source to SiCl4/H2 prepared pc-Si thin film photoconductive properties of steady


stallinefraction 4 samples shown in Figure 4 (a) and 5 samples (b) the SEM surface topography. From Figure 4 we can see that the grain size of 4 samples is not uniform, but a larger size, about 70 ~ 80nm,mbt fora shoes, the maximum of 200nm. The uniformity of the grain size of 5 samples, but smaller,PUMA shoes wholesale, only a dozen nanometers. Figure 5 shows the crystallization rate was 72.5 (4 samples), 72 (5 samples) were 1.0X10 an optical conductivity,wholesale PUMA, 7.0 × 10 ~ S / cm. We found that the crystallization rate of the two samples is almost the same, but the difference of the optical conductivity is nearly three orders of magnitude. This is because the effect of hydrogen dilution, the hydrogen dilution of two samples were 62.5 (4 samples) and 90 (5 samples), their hydrogen dilution are> 50%,sheepskin ugg boots, the reaction has sufficient activity space H and SiC1 ( 1) the existence of active groups,MBT Fora Shoes, which promote the growth of surface grains Ll]. Therefore, when the hydrogen dilution decreases to 62.5% from 90 when the large grains favor the formation of thin film optical conductivity also increased. Figure 44 samples and 5Fig4SEMimagesof4and5sample I Chu Ying, etc.: to SiCI. / Hz for the low-temperature gas source preparation pc-si thin film photoconductive properties of steady 713 Reference: E1-] [23 [3] StaeblerDL. WronskiCR. [J]. ApplPhysLett. 1977.31:292. LavatoM. eta1. [J]. ApplPhysLett, 1979.34 (2): 160. LinXY. HuangCJ. eta1. [J]. ChinesePhysicsLet-ters, 2003.20 (10): 1879. atlow--temperaturefromSiCl4/H2mixtureYUChu-ying, LINXuan-ying, HUANGRui '. (1.PhysicsDepartraentofShantouUniversity, Shantou515063, China; 2.PhysicsDepartmentofNanjingUniversity, Nanjing210093, China) Abstract: Thevarianceoftheconductivityofpc-Sifilmshaeeninvestigatedunderilluminationforlongperi-ods. Thesefilmsarepreparedunderlow-temperatureof300 ℃ bytheplasmaenhancedchemicalvapordeposi-tiontechnologyfromSiC14/H2. Theresultsofexperimentindicatethatthefilmshavethecharacteristicasthepersistentph0t0c0nductivityeffect. Theresultalsoshowsthatthestabilityph0t0conductivityofthefilmsisre-latedtOthecrystallinefractionandthegrainsizeofthefilms. Thestabilityphotoconductivityincreaseswiththeincreasingonthecrystallinefractionandthegrainsize. Keywords: polycrystallinesiliconfilms ~ persistentphotoconductivityeffect; crystallinefraction; grainsize9s foot yesterday 『b mole

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