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lompiacv
Posted: Wed 3:59, 08 Dec 2010
Post subject: ugg boots billig 纳米级
纳米级电容测微系统的研究
基线法直径(mm)(nm)(/an)(mV)V一P(mV)拟合线性度拟合线性度10.960~44169≤40.416%0.59%l一趔馨时间(h)图5使用币1传感器对仪器做的温度的零点漂移曲线图表1给出了使用纳米级电容测头的仪器技术指标。并对该仪器做了温度零点漂移试验,
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,结果如图5。本测试是在室温等条件相对稳定的情况下进行的,最大漂移量仅为96nm。另外,改进后的JDC型纳米级电容测微仪由于采用了特殊的布线电容双屏蔽电缆与特殊的联接方法,从而基本上消除了传感器引线的分布电容。在仪器技术指标方面,其动态频响可达0~4kHz,改进后测量仪的满量程线性度优于0.5%,位移量显示最小可到0.01/zm(对应输出模拟电压为±5V)。由表1和图5的相关数据可见,根据前述技术对仪器原理电路进行了大幅改进,使之在提高精度的同时其他各项主要数据均有较好表现。显然,
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,作为纳米级检测的成型产品,JDC电容测微仪的各项实验技术指标已经接近或达到了国外同类产品的水平。本仪器可广泛应用于高准确度动、静态位移计量及纳米定位。目前实验样机已成功应用于清华大学压电陶瓷的高精度纳米测量中,并取得了良好的效果,
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。·18·随着电容测微技术的不断发展和本仪器的不断改进,纳米级电容测微仪必将有更为广阔的应用前景。参考文献l1JD.Marioli,
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,eta1.,Highresolutionmeasurement0fcapacitivetrans―ducersusingaresonancedetectiontechnique.Proc.Int.conf.,IMEKO(Turin)pp.603―607,1993l2JKi―HoHan,
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,Young-HoCho,Sel~bNancedhigh―resolutioncapacitivemicroaccelerometersusingbranchedfingerelectrodeswithhi【gh―awl―plitudesensevoltage,2002l3JF.C&stelli,theelectrolyticcapacitivedisplacementtransducerfornano―technologies.2000l4JSumantFanganathan,MichaelInerfield,ShUVORoy,StevenL.Garverick,Sub-FemtofaradCapacitiveSensingforMicrofabricatedTransducersUsingCorrelatedDoubleSamplingandDeltaModula―tion,IEEETransactionsoncircuitsandsystems-II:analoganddigi―talsignalprocessing,VOL,47,NO.11,N0v=EMBER2000[5]李红民,小型化超高精度、宽频响电容测微仪的研究[硕士论文],天津大学精密仪器与光电子工程学院,1999l6JXiujunLi,GerardC.M.Meijer,EliminationofShuntingConduc―tanceEffectsinaLow-CostCapacitive-SensorInterface,IEEETransactionsoninstrumentationandmeasurement,V0L.49,N0.3JUNE2000[7]黄辉炬.电容测微仪动态测试及其智能化的研究[硕士论文],天津大学精密仪器与光电子工程学院,1988盐量蕉Q:!!
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