Rosetta Stone wholesale Photoconductive-type mixed

Photoconductive-type mixed crystal waveguide detectors Si1-xGex

EEElectron threat wLetters ~ 1986.7 (5): 330 [3] HuangF,[link widoczny dla zalogowanych], SakamotoK, etalIEEEPhotonLett, 1997 (2): 229 [4azD, SehowC. etatApplLett, 1996.69 (19) 2798 [5] TemkinH. AntreasyanA, etalApp [. Phys. Lett, 1986.49 (13): 809 [6] FangYKetalIEEETram. ElectronD. 1992.39 (6): 1350 [7] KawachiMIEEEProc. Optoetectron, 1996,[link widoczny dla zalogowanych],143 (5): 257 [8] KotodzeyJ, el-atIEEE. J. Selected Ⅱ inQua-ntumElactronics (JSTQE). 1998.4 (6): 964Mix-crystalSi1 a GePhotoconductorWaveguideDetectorZhuangWanru, ZhengYoudou, ZhuShunming, LiuXiabing, HuangYuongzheng (TheStateKeyLabonIntegratedOptoelectronic, InstituteofSemiconductors, CAS, Beijing100083) (DepartmentofPhysics, NanjingUniversity, Nanjing210008) AbstraetMix-crysta1Si1GePhotoconductorWaveguideDetectorwasreportedatfirst. TheSiGeI1ayerwasgrownonSiON/Si02/Sibyrapidthermalprocessing, verylowpressure, chemicalvapordeposition (RTP / VLP-CVD). Thenrunningtheannealof650 ℃ for30minutes,[link widoczny dla zalogowanych], Si1GeIalloywaschangedintothemixingofthepolycrystalandamorphous. ThephotoconductordetectorswerefabricatedwithlOvmwideand2mmlongThedetectingsensitivitieswerebetween0022to0.010A / W, whendetectorswerebiased20V. TheresponsivecurvesofthespectrumofthephotoconductordetectormadebythemixingofthepolycrystalandamorphouswereafunctionofC-econtentandwereshiftedbluemovefromtheoneofsinglecrystalSi】 a GeIdetector. Thepeakwavelengthresponseat875nm, 892nm,[link widoczny dla zalogowanych], 938nmand984nmarecorrespondingtotheGecontentx = 035, X = 04, x0.5andX = 0.6respectively. TheseSiGephotoconductorwaveguidedetectorcanbeveryexpedientfabricatedontheendofSiO,[link widoczny dla zalogowanych], waveguidedevicesKeywords: Ge, OptoelectronicdevicesonSi-based, Photodeteetor, OEIC42

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