mbt fora shoes To SiCl4-H2 gas source at low tempe

Low-temperature gas source to SiCl4/H2 prepared pc-Si thin film photoconductive properties of steady

stallinefraction 4 samples shown in Figure 4 (a) and 5 samples (b) the SEM surface topography. From Figure 4 we can see that the grain size of 4 samples is not uniform, but a larger size, about 70 ~ 80nm,[link widoczny dla zalogowanych], the maximum of 200nm. The uniformity of the grain size of 5 samples, but smaller,[link widoczny dla zalogowanych], only a dozen nanometers. Figure 5 shows the crystallization rate was 72.5 (4 samples), 72 (5 samples) were 1.0X10 an optical conductivity,[link widoczny dla zalogowanych], 7.0 × 10 ~ S / cm. We found that the crystallization rate of the two samples is almost the same, but the difference of the optical conductivity is nearly three orders of magnitude. This is because the effect of hydrogen dilution, the hydrogen dilution of two samples were 62.5 (4 samples) and 90 (5 samples), their hydrogen dilution are> 50%,[link widoczny dla zalogowanych], the reaction has sufficient activity space H and SiC1 ( 1) the existence of active groups,[link widoczny dla zalogowanych], which promote the growth of surface grains Ll]. Therefore, when the hydrogen dilution decreases to 62.5% from 90 when the large grains favor the formation of thin film optical conductivity also increased. Figure 44 samples and 5Fig4SEMimagesof4and5sample I Chu Ying, etc.: to SiCI. / Hz for the low-temperature gas source preparation pc-si thin film photoconductive properties of steady 713 Reference: E1-] [23 [3] StaeblerDL. WronskiCR. [J]. ApplPhysLett. 1977.31:292. LavatoM. eta1. [J]. ApplPhysLett, 1979.34 (2): 160. LinXY. HuangCJ. eta1. [J]. ChinesePhysicsLet-ters, 2003.20 (10): 1879. atlow--temperaturefromSiCl4/H2mixtureYUChu-ying, LINXuan-ying, HUANGRui '. (1.PhysicsDepartraentofShantouUniversity, Shantou515063, China; 2.PhysicsDepartmentofNanjingUniversity, Nanjing210093, China) Abstract: Thevarianceoftheconductivityofpc-Sifilmshaeeninvestigatedunderilluminationforlongperi-ods. Thesefilmsarepreparedunderlow-temperatureof300 ℃ bytheplasmaenhancedchemicalvapordeposi-tiontechnologyfromSiC14/H2. Theresultsofexperimentindicatethatthefilmshavethecharacteristicasthepersistentph0t0c0nductivityeffect. Theresultalsoshowsthatthestabilityph0t0conductivityofthefilmsisre-latedtOthecrystallinefractionandthegrainsizeofthefilms. Thestabilityphotoconductivityincreaseswiththeincreasingonthecrystallinefractionandthegrainsize. Keywords: polycrystallinesiliconfilms ~ persistentphotoconductivityeffect; crystallinefraction; grainsize9s foot yesterday 『b mole

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